摘要
磁控溅射靶材的利用率在降低生产成本中起着重要作用。正交的靶电磁场能显著地延长电子的运动路程,增加同工作气体分子的碰撞几率,提高等离子体密度,使磁控溅射速率数量级的提高,因此靶面正交电磁场的分布将决定靶的烧蚀情况。提出了2种改善矩形平面靶磁场分布的方法,经过分析,这2种设计将拓宽靶面的刻蚀范围,提高靶材的利用率。
It is very important to reduce the costs by improving the utilization ratio of the target in the magnetron sputtering deposition process. The range of movement for electrons can be extended in the orthogonal electromagnetic filed. It can improve the probability of collision between electron and working gas (argon) molecule and plasma density. Then the sputtering rate greatly increases. The etching areas are mainly related to the distribution of the orthogonal electromagnetic filed near the target surface. Two kinds of models to optimize the distribution of the electromagnetic filed near the rectangular target are suggested. The areas of the etching on the target and the utilization ratio of the target are improved by analysis of the two methods.
出处
《真空与低温》
2004年第2期112-116,共5页
Vacuum and Cryogenics
