摘要
In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up is reported. The laser system consists of a semiconductor laser, a blazed grating and an external mirror. Its sideband suppression ratio over 20 dB was obtained. Conveniently tuning in wavelength region of 797.38 - 807.26 nm was achieved. The laser is operating in single frequency with narrow linewidth smaller than 0.06 nm. The output beam has good directional stability when tuned.
<正> In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up is reported. The laser system consists of a semiconductor laser, a blazed grating and an external mirror. Its sideband suppression ratio over 20 dB was obtained. Conveniently tuning in wavelength region of 797.38 - 807.26 nm was achieved. The laser is operating in single frequency with narrow linewidth smaller than 0.06 nm. The output beam has good directional stability when tuned.
基金
This work was supported by the Natural Science Foundation of Tianjin under Grant No. 993600711 and Doctor Foundation of Hebei.
