三端双向负阻晶体管的二维数值模拟及分析

2-D Numerical Simulation and Analysis of 3-Terminal Bidirectional Negative Resistance Transistor

对双向负阻晶体管(BNRT)的三端特性进行了数值模拟,得到了器件S型负阻曲线。根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布,解释了其S型负阻特性的产生机理。模拟分析了负阻曲线随控制电压变化的情况。结果表明,随控制电压的增大,转折电压、转折电流和维持电压均增大。最后,对不同结构和工艺参数的三端BNRT进行了模拟,总结出器件结构和工艺参数对负阻特性的影响。

3-terminal characteristics of the bidirectional negative resistance transistor (BNRT) are numerically simulated and the S-type negative resistance curve is obtained. According to the distribution of potential, electron and hole in the BNRT at different stages, the mechanism inducing S-type negative resistance characteristics is explained. Also, the variation of negative resistance curve with controlled voltage is simulated. Results indicate that snapback voltage, snapback current and sustaining voltage increase with controlled voltage. Finally, 3-terminal BNRT with different structure and process parameters is simulated, and the influence of device structure and process parameters upon negative characteristics is summarized.