摘要
介绍了一种用于数模转换器的电流 电压转换电路。在数模转换器的负载电阻片内集成的情况下 ,利用文中提出的电流 电压转换电路 ,数模转换器实现了要求的宽摆幅电平输出 (全“0”输入时 ,输出低电平 - 3V ;全“1”输入时 ,输出高电平 3 5V)。整个数模转换器电路用 1 2 μm双层金属双层多晶硅n阱CMOS工艺实现。其积分非线性误差为 0 4 5个最低有效位 (LSB) ,微分非线性误差为 0 2LSB ,满摆幅输出的建立时间小于 1μs。该数模转换器使用± 5V电源 ,功耗约为 30mW ,电路芯片面积为 0 4 2mm2 。
This paper mainly describes a current-to-voltage conversion circuit for CMOS D/A converter fabricated in a 1 2 μm double-poly double-metal n-well CMOS technology. To implement the required full-swing voltage output (the voltage swing from -3 V to 3 5 V) of DAC, a current-to-voltage conversion circuit with on-chip loading resistor is proposed. This D/A converter is supplied by ±5 V power, and dissipates about 30 mW. The integral non-linearity error is less than 0 45 LSB, and the differential non-linearity error is less than 0 2 LSB. The settling time to full swing is less than 1 μs. The circuit chip size is 0 42 mm 2.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第4期493-497,共5页
Research & Progress of SSE