应变量子阱传输矩阵法设计及MOCVD外延制备

Quantum Well Design Using Transmission Matrix Method and Grown by MOCVD

借鉴光波导设计的传输矩阵法思想 ,引入传输矩阵方法进行量子阱设计的应用 ,以 980nm半导体激光器用的应变量子阱为例 ,利用MOCVD外延生长技术设计生长了InGaAs/GaAs应变量子阱结构 ,测量PL谱峰值波长与设计波长吻合 ,X双晶衍射仪标定的量子阱组分和厚度基本与设计一致 ,从而验证了传输矩阵法用于量子阱设计是一种有效快捷的方法。

Transmission matrix method was extensively used to design optical waveguide, because the Schrodinger equation and the Helmholtz equation have the similar form, so that the transmission matrix method could be used to design the quantum well structure. In the present paper, the transmission matrix method was introduced and as a example used to design an InGaAs/GaAs strain quantum well which is the core component of the 980 nm semiconductor laser. The strain quantum well was grown by MOCVD. The results of PL and X-ray verify that the transmission matrix method is one kind of accurate and prompt method for the quantum well design.