FeCoSiB单层和FeCoSiB/Cu/FeCoSiB多层磁弹性膜应力阻抗性能研究

Strain Impedance Properties of FeCoSiB and FeCoSiB/Cu/FeCoSiB Magnetoelastic Thin Films

用磁控溅射法在玻璃基片上制备了FeCoSiB单层膜和FeCoSiB/Cu/FeCoSiB多层膜,并进行磁场退火热处理以消除残余应力和形成磁场织构。薄膜的磁性能采用振动样品磁强计(VSM)进行测试,采用HP4275A 型阻抗分析仪在200kHz^10MHz频率范围内测试了薄膜的应力阻抗(SI)效应。结果表明,磁场退火热处理可形成感生磁各向异性以及提高薄膜的SI效应,在10MHz测试频率下,FeCoSiB薄膜的ΔZ/Z可达1.5%,而FeCoSiB/Cu/FeCoSiB的可达8%。随着测试频率下降到1MHz时,薄膜的SI效应显著下降。

In this paper, FeCoSiB single layer film and FeCoSiB/Cu/FeCoSiB multilayer film were deposited on glass substrates by DC magnetron sputtering. Film magnetic properties were analysed by vibrating sample magnetometer (VSM). The stress impedance effect was investigated at the frequency range from 200kHz to 10MHz by HP4275A impedance analyzer. The results show that magnetic annealing can improve film stress impedance effect and induce magneto-anisotropy. At 10MHz, FeCoSiB film stress impedance ratio reaches to 1.5%, but 8% for FeCoSiB/Cu/FeCoSiB multilayers. With the decrease of measuring frequency to less than 1MHz, film stress impedance ratio decreases greatly.