摘要
给出了一种厚膜氧化多孔硅(OPS)层上制作Cu电感的新型工艺技术。由于OPS是一种低损耗的材料,铜的电阻率很低,采用OPS隔离硅衬底和Cu线圈能够降低电感的寄生损耗,提高电感Q值。实验过程中将孔隙度>56%的多孔硅厚膜利用两步氧化法氧化为OPS厚膜,通过种子层溅射/光刻/电镀Cu/刻蚀种子层的方法完成了Cu线圈的电镀。获得了1nH的电感,其Q值在10GHz的频率下达到了9,电感的自谐振频率超过20GHz。
A novel process for realizing a copper inductor on oxidized porous silicon (OPS) insulating layer is presented. The combination of thick OPS insulating layer and copper coils can reduce the parasitic loss and effectively improve the Q factor of inductors due to OPS is a low loss material and copper has a high conductivity. The OPS layers are prepared by a two-step oxidation of porous silicon (PS) with porosities beyond 56%. The copper coils are formed with the processing method of seed layer sputtering / lithography / copper electroplating / seed layer etching. As a result,(1 nH) copper planar inductor on OPS layer is realized. Its Q factor is 9 at (10 GHz) and the self-resonant frequency beyond 20 GHz.
出处
《微细加工技术》
2004年第4期50-55,共6页
Microfabrication Technology
基金
国家973重点基础研究发展资助项目(G1999033105)
关键词
氧化多孔硅
电镀
电感
射频
OPS (oxidized porous silicon)
electroplating
inductor
RF
