期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

对辐射感应闭锁窗口现象的解释 被引量：1

Analysis of Latch-up Single Window and Multi-window Phenomena in CMOS Devices
下载PDF
导出
摘要 中、大规模CMOS器件受到瞬态辐射时,出现了闭锁单窗口、多窗口现象。为了获得闭锁窗口的出现原因,借助对窗口现象的有关参考文献的研究,利用计算机电路模拟软件,分析了CMOS器件多个闭锁路径之间的相互作用。在此基础上,提出了解释窗口现象的"三径"闭锁模型。应指出的是,该闭锁模型还需要试验上的进一步验证与支持。 When CMOS devices are irradiated by transient radiation, phenomena of latch-up single window or multi-window may appear. To find the cause of latch-up window phenomena many references concerned in detail are studied and the reciprocity of several paths in CMOS devices is analyzed by circuit simulation software on computer. Based on this, a 'three-path' latch-up model is developed to explain the window phenomena. Nevertheless this model needs verification and supports by experiments later.
作者 许献国 杨怀民 胡建栋
机构地区 中国工程物理研究院电子工程研究所 北京邮电大学电信学院
出处 《信息与电子工程》 2004年第4期314-317,共4页 information and electronic engineering
基金 国防科技基础研究基金(413110402)
关键词 核电子学 “三径”闭锁模型 计算机模拟 闭锁窗口 闭锁路径 CMOS器件 nuclear electronics 'three-path' latch-up model computer simulation latch-up window latch-up path CMOS devices
分类号 TN432 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献15

  • 1C Canali, F Corsi, M Muschitiello, et al. Infrared Microscopy Study of Anomalous Latchup Characteristics Due to Current Redistribution in Different Parasitic Paths[J]. IEEE Trans. Elect. Dev, 1989, 36 (5): 969-978.
  • 2B L Gregory, B D Shafer. Latchup in CMOS Integrated Circuits[J]. IEEE Trans. Nucl. Sci,1973,20(1):293-299.
  • 3A H Johnston, R E Plaag ,M P Baze. The Effect of Circuit Topology on Radiation-Induced Latchup[J]. IEEE Trans. Nucl. Sci,1989, 36(6): 2229-2238.
  • 4W J Dennehy, A G Holmes-Siedle ,W F Leopold. Transient Radiation Response of Complementary-Symmetry MOS Integrated Circuits[J].IEEE Trans.Nucl. Sci,1969,16(1):114-119.
  • 5P V Dressendorfer ,A Ochoa, Jr. An Analysis of the Modes of Operation of Parasitic SCRs[J]. IEEE Trans. Nucl. Sci,1981,28(6): 4288-4291.
  • 6D D Huffman. Prevention of Radiation Induced Latchup in Commercial Available CMOS Devices[J]. IEEE Trans. Nucl. Sci,1980,27(6): 1436-1441.
  • 7M P Baze ,A H Johnston. Latchup Paths in Bipolar Integrated Circuits[J]. IEEE Trans. Nucl. Sci, 1986, 33(6):1499-1501.
  • 8R R Troutman. Latchup in CMOS Technology[C]. MA, USA : Kluwer Academic Publisher,1986.
  • 9J W Harrity ,P E Gammill. Upset and Latchup Thresholds in CD-4000 Series CMOS Devices[C]. IEEE. NSREC Poster paper A-7. New York: IEEE, 1980:1-2.
  • 10J L Azarewicz ,W H Hardwick. Latchup Window Tests[J]. IEEE Trans. Nucl. Sci, 1982, 29(6):1804-1808.

同被引文献8

  • 1许献国,杨怀民,胡健栋.CMOS集成电路的闭锁特性和闭锁窗口分析[J].核电子学与探测技术,2004,24(6):674-678. 被引量：4
  • 2Azarewicz J L, Hardwick W H. Latchup window tests[J]. IEEE Trans Nucl Sci, 1982,29(6):1804-1808.
  • 3Coppage F N, Allen D J, Dressendorfer P V, et al. Seeing through the latchup window[J]. IEEE Trans Nucl Sci, 1983, 30(6) : 4122-4126.
  • 4Johnston A H,Baze M P. Mechanisms for the latchup window effect in integrated circuits[J]. IEEE Trans Nucl Sci, 1985, 32(6):4018-4025.
  • 5Plaag R E, Baze M P,Johnston A H. A distributed model for radiation-induced latchup[J]. IEEE Trans Nucl Sci, 1988, 35 (6):1563-1568.
  • 6Johnston A H, Plaag R E,Baze M P. The effect of circuit topology on radiation-induced latchup[J]. IEEE Trans Nucl Sci, 1989, 36(6):2229-2238.
  • 7特劳特曼RR 嵇光大 卢文豪.CMOS工艺中的闭锁—问题与解决办法[M].北京,科学出版社,1996..
  • 8Gregory B L,Shafer B D. Latchup in CMOS integrated circuits[J]. IEEE Trans Nucl Sci, 1973, 20(1) : 293-299.

引证文献1

二级引证文献1

信息与电子工程
2004年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部