摘要
设计了一种采用 0 .2 5 μmCMOS工艺的高精度带隙基准电压源 ,该电路结构新颖 ,性能优异 ,其温度系数可达5ppm/℃ ,电源抑制比可达到 6 2dB。在此基础上设计了一种基准电流源 ,其温度系数可达 6 ppm/℃ ,输出电流变化率仅为0 .0 3% /V。
A bandgap voltage reference using 0.25μm CMOS process is described.SPECTRE simulation shows that the average temperature coefficient(TC) is 5ppm/℃ from-10℃ to 70℃ and the average power supply rejection ratio(PSRR) is 62dB.At the same time,a current referece based on the bandgap voltage reference is introduced.It has a TC of 6ppm/℃ and a PSRR of 0.03%/V.The circuit refered above features a novel topology and excellent performance.
出处
《计算机与数字工程》
2004年第6期62-64,81,共4页
Computer & Digital Engineering
关键词
CMOS
带隙
电压源
电流源
CMOS,Bandgap,Voltage reference,Current reference
