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新型sol-gel技术制备BST0—3型厚膜 被引量:3

Fabrication of BST Thick Films Using a New Sol-gel Process
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摘要 采用传统高温固相烧结法合成了Ba0.6Sr0.4TiO3(BST)陶瓷粉,并用高能球磨法将其细化为纳米粉,均匀分散于组分相同的BST溶胶中,形成稳定的厚膜先体溶液,而后用匀胶法制备出厚度约为6.5μm的BST厚膜。XRD测试结果表明,650℃热处理后的厚膜为单一钙钛矿相。SEM观测显示厚膜表面均匀一致,无裂纹出现。800℃热处理后的厚膜在室温、频率1kHz下相对介电常数εr和介质损耗tgδ分别为455、0.036。 Ba0.6Sr0.4TiO3 powders were produced by conventional high temperature solid-state reactions method. Then the powders were ball milled into sizes of nanometer by a higher energy planetary ball mill machine and uniformly dispersed into BST sol-gel matrix whose composition is same as the powders. 6.5 μm thick films were fabricated using a spin-coating method. The XRD analysis indicates that the thick films annealed at 650℃ possess single-phase perovskite type structure. The SEM micrograph shows that the thick films are uniform and crack-free. Dielectric constant εr and dielectric loss tgδ of the thick film annealed at 800℃ are 455, 0.036, respectively.
出处 《电子元件与材料》 CAS CSCD 北大核心 2005年第1期19-21,共3页 Electronic Components And Materials
基金 国家"973"计划资助项目(2002CB613304) 上海市重点学科资助项目(0152NM038)
关键词 无机非金属材料 BST厚膜 新型sol-gel技术 高能球磨 介电性能 inorganic non-metallic materials BST thick film new sol-gel technology high energy ball-milling dielectric properties
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参考文献8

  • 1刘梅冬,刘少波,曾亦可,李楚容,邓传益.(Ba_(1-x)Sr_x)TiO_3薄膜的制备及性能的研究[J].压电与声光,2001,23(1):41-43. 被引量:10
  • 2Barrow D A, Pctroff T E, Tandon R P, et al. Characterization of thick lead zirconate films fabricated using a new sol gel based process [J]. J Appl Phys, 1997, 81(2): 876-881.
  • 3Corker D L, Zhang Q, Whatmore R W, et al. PZT'composite'ferroelectric thick films [J]. J Eur Ceram Soc, 2002, 22: 383-390.
  • 4Wang Z H, Zhu W G, Zhao C L, et al. Dense PZT thick films derived from sol-gel based nanocompositc process [J]. Mater Sci Eng, 2003, B99:56-62.
  • 5Jenkins D F L, Clegg W W, Cattan E, et al. PZT thin film Bi-layer devices for phase controlled actuation in MEMS [J]. J Electro Ceram, 2001,7(1):5-11.
  • 6Schiller P, Polla D L. Integrated piezoelectric microactuators based on PZT thin films [J]. Techn Dig Transducess. 1993: 154-157.
  • 7Jenkins D F L, Clegg W W, Cattan E, et al. PZT thin film Bi-layer devices for phase controlled actuation in MEMS [J]. J Electro Ceram, 2001, 7(1):5-11.
  • 8Corker D L, Zhang Q, Whatmore R W, et al. PZT'composite'ferroelectric thick films [J]. J Eur Ceram Soe, 2002, 22: 383-390.

二级参考文献7

  • 1ROY D,KRUPANIDHI B S.Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications[].Applied Physics Letters.1993
  • 2DIMOS D,MUELLER H C.Perovskite thin films for high-frequency capacitor applications[].Annual Review of Materials Research.1998
  • 3WHATMORE W R,WATTON R.Pyroelectric ceramics and thin films for uncooled thermal imaging[].Ferroelectrics.2000
  • 4HORIKAWA T,MIKAMI N,MAKITA T,et al.Dielectric properties of (Ba, Sr )TiO3 thin film deposited by RF-sputtering[].Japanese Journal of Applied Physics.1993
  • 5KIRLIN P,BILODEAU S,BUSKIK V P.MOCVD of BaSrTiO3 for ULSI DRAMS[].Integrated Ferroelectrics.1995
  • 6SCHLOSS F L,HALLER E E.The effect of growth temperature on pulsed laser deposited ( Ba, Sr ) TiO3 thin films designed for pyroelectric far -infrared detector application[].Integrated Ferroelectrics.1999
  • 7TAHAN M D,SAFARI A,KIEIN L C.Preparation and characterization of Bax Sr1-x TiO3 thin films by a Sol -Gel technique[].Journal of the American Ceramic Society.1996

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