期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

溶胶–凝胶法制备BST薄膜的结晶特性研究 被引量：2

Research on the Crystalline Properties of (Ba_(0.65)Sr_(0.35))TiO_3 Thin Films Prepared by Sol-gel Method
下载PDF
导出
摘要 采用改进的溶胶-凝胶(sol-gel)工艺配制了(Ba0.65,Sr0.35)TiO3(BST)溶胶.利用旋转涂覆工艺将BST溶胶涂覆在SiO2/Si衬底上,在不同的热处理条件下制备出BST薄膜.XRD分析结果表明:制得的BST薄膜形成了单一钙钛矿结构;AFM测试结果表明,BST薄膜表面平整致密,无裂纹.表面均方根粗糙度为3～6nm,晶粒大小分布均匀,直径约为40～100 nm.随着热处理温度的提高,BST薄膜的晶粒变大,表面粗糙度变大. Ba0.65,Sr0.35)TiO3(BST) sols were prepared by an improved sol-gel method. Using a spinning-coating process, the BST sols were coated on SiO2/Si substrates and then they were annealed to form crystalline BST thin films at different temperature conditions. XRD analyses show that all the BST films have formed pure cubic perovskite structure; AFM graphs show that BST films are smooth, dense and crack-free microstructure. The Root Mean Square of these films is 3~6 nm and the average grain sizes is 40~100 nm. The RMS and grain size of BST films become larger with higher annealing temperature.
作者 方瑜 肖定全 袁小武 于光龙 卢苇 朱建国
机构地区 四川大学材料科学与工程学院
出处 《电子元件与材料》 CAS CSCD 北大核心 2005年第1期25-28,共4页 Electronic Components And Materials
基金 国家自然科学基金资助项目(10175045)
关键词 无机非金属材料 BST薄膜 溶胶-凝胶法(sol-gel) 微结构 inorganic non-metallic materials BST thin films sol-gel method microstructure
分类号 TN384 [电子电信—物理电子学]
  • 相关文献

参考文献10

  • 1王根水,赖珍荃,于剑,孟祥建,孙憬兰,郭少令,褚君浩,金承钰,李刚,路庆华.化学溶液法制备的Ba_(0.9)Sr_(0.1)TiO_3薄膜的结构及光学特性研究[J].红外与毫米波学报,2002,21(1):37-40. 被引量：10
  • 2Zhu X H, Nui C, Helen L W, et al. Epitaxial growth and planar dielectric properties of compositionally grade (Bal.xSrx)TiO3 thin flims prepared by pulsed-laser deposition [J]. Appl Phys Lett, 2002, 80(18): 3376-3378.
  • 3Shin Ju Cheol, Hwang Chcol Seong, Kim Hyeong Joon. Electrical conduction properties of sputter-grown (Ba, Sr)TiO3 thin flims having IrO2 electrodes [J]. Appl Phys Left, (2002), 76(12): 1609-1671.
  • 4Chen J G, Tang J, Chu J H. Pyroeletric properties in sol-gel derived barium strontium fitanate thin films using a highly diluted precursor solution [J]. Appl Phys Lett, 2000, 77(7): 1035-1037.
  • 5Chen J G, Tang J, Meng X J, et al. Fabrication and characterization of pyroelectric Ba0.3Sr0.2TiO3 thin films by a sol-gel process [J]. J Am Ceram Soc, 2001, 84(7): 1421-1424.
  • 6Gao Y, He S. Effect of precursors and substrate on microstrucmrc materials on microstrucmres, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition [J]. J Appl Phys, 2000, 87(1): 124-127.
  • 7Padmini P, Taylor T R, Lefevre M J, et al. Realization of high tenability barium strontium titanate thin films by magnetron sputtering [J]. Appl Phys Lett, 1999, 75(20): 3166-3168.
  • 8Lee J C, Yoon S G Characterization of (Ba1-xSrx)TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates with different Ti buffer layer thicknesses [J]. J Vac Sci Technol B, 1999, 17(5): 2182-2184.
  • 9Chen X E Lu W Q, Zhu W G, et al. Structure and thermal analyses on phase evolution of sol-gel (Ba, Sr)TiO3 thin films [J]. Surf Coat Tech, 2003, 167: 203-206.
  • 10Wu D, Li A D, Ling H Q, et al. Fabrication and electrical properties of sol-gel derived thin films with metallic LaNiO3 electrode [J]. Appl Surf Sci, 2000, 165: 319-324.

二级参考文献2

共引文献9

同被引文献16

  • 1张训栋,杨晓静,姚熹,张良莹.Ni掺杂对钛酸锶钡铁电薄膜性能的影响[J].压电与声光,2005,27(4):401-403. 被引量：5
  • 2Jaemo Im, Auciello O, Baumann P K. et al. Composition-control of magnetron-sputter-deposited (BaxSr1/2x)Ti1+yO3+z thin films for voltage tunable devices [J]. Appl Phys Lett, 2000, 76(5): 625-627.
  • 3Chang W, Horwitz J S, Carter Adriaan C, et al. The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films [J]. Appl Phys Lett.1999, 74 (7): 1033-1035.
  • 4Cole M W, Hubbard C, Ngo E, et al. Structure-property relationships in pure and acceptor-doped Ba1-xSrxTiO3 thin films for tunable microwave device applications [J]. J Appl Phys, 2002, 92(1): 475-483.
  • 5Joshi P C, Cole M W.Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications [J]. Appl Phys Lett, 2000, 77(2): 289-291.
  • 6Radhapiyari L. James A R, Thakur Q P,et al. Structural and dielectric properties of Fe-substitute.d BST thin films grown by laser ablation [J].Mate Sci Eng, 2005, B117: 5-9.
  • 7Wang S Y, Cheng B L, Wang Can, et al. Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor [J]. Appl Phys Lett,2004, 84(20): 4116-4118.
  • 8Kim K T, Kim C II. The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films [J]. Thin Solid Films,2005,472:26-30.
  • 9Cole M W, Nothwang W D, Hubbard C, et al. Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods [J]. J Appl Phys, 2003, 93(11): 9218-9825.
  • 10Cole M W, Joshi P C, Ervin M H, et al. The influence of Mg doping on the materials properties of Ba1-xSrxTiO3 thin films for tunable device applications [J]. Thin Solid Films,2000,374: 34-41.

引证文献2

二级引证文献2

电子元件与材料
2005年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部