交流瓷介电容器的生产工艺对击穿电压的影响

Influences of Manufacturing Technology on Breakdown Voltage of AC Ceramic Capacitors

击穿破坏电压是交流瓷介电容器最主要的技术参数,也是最难解决的技术难题。通过不同工艺的对比实验,具体研究了产品电极结构、引线焊接工艺、包封层固化工艺和环氧树脂包封工艺对交流瓷介电容器击穿电压的影响,据此优化了生产工艺,使得系列交流瓷介电容器耐压达到了较高的水平,Y1产品交流击穿电压达7.8kV以上,Y2产品交流击穿电压达6.0kV以上。

Breakdown voltage is not only a key characteristic of AC ceramic capacitors, but also the most difficult technical barrier. Manufacture technology was studied to see influences on breakdown voltage in manufacture procedures, such as plate construction of capacitor, leads soldering, hardening of coating and epoxy resin coat. Breakdown voltages are raise to very high levels after the improvements to the manufacture technology. For Y1 capacitor, breakdown voltage is at least AC 7.8 kV, for Y2 capacitor, it is at least AC 6.0 kV.