摘要
文章利用实验结果分析了 5 4 HC0 4的阈值电压在不同剂量率下随总剂量的变化关系 ,对若干种加速实验方法进行了比较 ,认为 1 0 ke V X射线源可以作为对 MOS器件进行快速的加速实验性能测试的辐照源。从环境安全考虑 ,1 0 ke V X射线源易于屏蔽 ,可以用于硅片级的参数测试 ,且花费远远小于封装后的器件在60 Co源上的性能测试 。
Based on experimental results, threshold voltage of 54HC04 device dependent on different dose rates is analyzed in the paper A comparison is made on various methods for acceleration test, and the 10 keV X ray radiation source is considered to be one of the sources for fast accelerating test on MOS devices Considering the environmental safety, the 10 keV X ray source is easy to be shielded, and the cost is much lower than other me thods This method can also be used for parameter testing at the wafer level It is an effective approach for total dose estimation
出处
《微电子学》
CAS
CSCD
北大核心
2002年第4期269-272,共4页
Microelectronics
关键词
辐照加固
MOS器件
X射线
加速实验
高温退火
Radiation hardening
MOS device
10 keV X ray
Acceleration test
High temperature annealing
