快速生长的TGS晶体缺陷的X射线形貌术研究

X-Ray Diffraction Topography Study of Defects in Rapid Grown TGS Crystals

本文用 X 射线形貌术研究了生长速度不同的 TGS 晶体的缺陷,得到了与浸蚀法一致的结果;比较发现,快速生长的 TGS 晶体中缺陷密度较高;并对缺陷的性质和形成原因进行了讨论。文章还指出了快速生长的晶体与正常晶体性能间的差别主要是由于晶体中缺陷密度的不同引起的。

The defects in TGS crystals grown with different growth rate have been studied bymeans of X-ray topography in this paper.The conclusions is about the same as that watchedby etching methods.Comparing the experimeantal results we found that there are more de-fects in rapid grown crystals than normal one.The properties of defects and the causes of thedefect formation have been discussed.The differences of properties between the rapid growncrystals and normal crytals are attributed to the different densities of the defects incrystals.