摘要
本文依据实验数据,提出了 CVD 金刚石薄膜生长机理方面的几点看法。认为甲烷的充分离解不利于金刚石生长,生长金刚石的活性物质主要是活性络合物(H…H…CH_3)~*。
On the basis of experiments,the growth mechanism of CVD diamond films wasdiscussed.It was showed that the enough dissociation of methane was detriment to the dia-mond growth.Also,the active radicals for diamond growth were mostly active complexes(H…H…CH_3).
出处
《人工晶体学报》
EI
CAS
CSCD
1993年第3期235-239,共5页
Journal of Synthetic Crystals