锗酸铋晶体的腐蚀形貌

Etching Morphology of Bismuth Germanate Crystal

研究了坩埚下降法生长锗酸铋晶体(BGO)的腐蚀形貌,比较了{112}、{111}、{110}、{100}晶面族的腐蚀形貌特征和速度,利用 X 射线劳厄定向并借助于极图确定了腐蚀坑的结晶学方位,推测了蚀坑的组成晶面主要是{112},其次是{110}。通过这些研究将有利于了解 BGO 的结晶习性,利用腐蚀形貌特征可方便地进行晶体定向和确定极轴的方向。

The etching morphology of bismuth germanate crystals grown by Bridgmanmethod were inverstigated.The characteristics of the etching patterns and the etching ratesof{112},{111},{110}and{100}faces were compared.We determined that the crys-tallographic planes of the etching pits were constituted by {112} and {110} planes.Theseinvestigations can understand further crystal habit of BGO.Based on characteristics of theetching patterns it is convenient to orientate the crystal and the direction of polar axis.