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具有方石英拓扑结构的微孔硫代锗锌酸盐的溶剂热合成与表征 被引量:2

Solvothermal Synthesis and Characterization of an Open-framework Thiozincogermanate with a Cristobalite Topology
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摘要 An open-framework thiozincogermanate was solvothermally synthesized and characterized by single crystal diffraction. The crystal crystallizes in the tetragonal system, space group I-42d with a=1.106 31(16) nm, c=1.914 6(4) nm, V=2.343 3(7) nm 3, Z=16, D c=1.550 g·cm -3, R= 0.054 2, wR=0.095 7. The structure is composed of supertetrahedron A 4S 4- 10(A=Zn or Ge) linked together by bridging sulfur atoms to produce a cristobalite topology, all Ge atoms are tetrahedrally coordinated, sulfur atoms have 2-coordinations, and Zn atoms replace Ge atoms in the framework. The compound has 1D channels along a (or b) direction with pore sizes of 1.064 nm×0.846 nm. UV-Vis reflectance spectrum show that the compound is a semiconductor with a optical gap of 3.0 eV. TG-DSC results indicate that this open-framework has a good stability in nitrogen. An open-framework thiozincogermanate was solvothermally synthesized and characterized by single crystal diffraction. The crystal crystallizes in the tetragonal system, space group I-42d with a=1.106 31(16) nm, c=1.914 6(4) nm, V=2.343 3(7) nm 3, Z=16, D c=1.550 g·cm -3, R= 0.054 2, wR=0.095 7. The structure is composed of supertetrahedron A 4S 4- 10(A=Zn or Ge) linked together by bridging sulfur atoms to produce a cristobalite topology, all Ge atoms are tetrahedrally coordinated, sulfur atoms have 2-coordinations, and Zn atoms replace Ge atoms in the framework. The compound has 1D channels along a (or b) direction with pore sizes of 1.064 nm×0.846 nm. UV-Vis reflectance spectrum show that the compound is a semiconductor with a optical gap of 3.0 eV. TG-DSC results indicate that this open-framework has a good stability in nitrogen.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2004年第12期2224-2226,共3页 Chemical Journal of Chinese Universities
基金 国家自然科学基金 (批准号 :2 0 0 710 0 6)资助
关键词 微孔硫化物 晶体结构 空旷骨架 热稳定性 半导体 Thiozincogermanate Crystal structure Open-framework Thermal Stability Semiconductor
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  • 1[3]Bedard R. L., Wilson S. T., Vail D. et al.. Stud. Surf. Sci. Catal.[J], 1989, 49: 375-387
  • 2[4]Sheldrick W., Wachhold M.. Angew. Chem. Int. Ed. Engl.[J], 1997, 36: 206-224
  • 3[5]Ferey G.. Angew. Chem. Int. Ed.[J], 2003, 42: 2576-2579
  • 4[6]Su W., Huang X., Li J. et al.. J. Am. Chem. Soc.[J], 2002, 124: 12944-12945
  • 5[7]Zheng N., Bu X., Wang B. et al.. Science[J], 2002, 298: 2366-2369
  • 6[8]Krebs B.. Angew. Chem. Int. Ed.[J], 1983, 22: 113-134
  • 7[9]Yaghi O. M., Sun Z., Richardson D. A. et al.. J. Am. Chem. Soc.[J], 1994, 116: 807-808
  • 8[10]Li H., Laine A., O'Keeffe M. et al.. Science[J], 1999, 283: 1145-1147
  • 9[11]Maclachlan M. J., Petrov S., Bedard R. L. et al.. Angew. Chem. Int. Ed.[J], 1998, 37: 2076-2079
  • 10[12]Chen X., Dilks K. J., Huang X. et al.. Inorg. Chem.[J], 2003, 42: 3723-3727

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