等效厚度评估GaAs MMIC的Si_3N_4电容可靠性

Reliability evaluation of Si_3N_4 capacitor of GaAs MMIC by equivalent thickness method

通过不同GaAsMMIC的MIMSi3N4电容结构,运用TDDB理论研究分析了斜坡电压下的MIMSi3N4电容的导电特性和击穿特性,确定了GaAsMMIC的MIMSi3N4电容失效不是介质本征击穿导致失效,而主要是由Si3N4介质的缺陷引起。基于缺陷导致介质电场击穿的原理,提出了等效厚度模型评估和监测GaAsMMIC的Si3N4介质电容的质量和可靠性的新方法,可以用于工艺生产线实现对Si3N4介质电容的质量和可靠性进行快速评估和监测。

The conductive and breakdown properties of MIM Si 3 N 4 capacitors of GaAs MMIC were studied and analyzed by TDDB theory.The dielectric defect is a major factor that c auses capacitor failure,instead of dielectric intrinsic bre akdown.Based on the principle of defects causing the dielectric breakdown of the electric field,the equivalent thickness model was prop osed to evaluate and monitor quality and reliability of Si 3 N 4 capacitor rapidly.