半导体集成辐射传感器基本原理的研究

A STUDY ON THE BASIC PRINCIPLE OF A SEMICONDUCTOR INTEGRATED RADIATION SENSOR

本文首次提出一种新型辐射传感器——半导体集成辐射传感器,并对它的基本原理作了系统的分折和研究。最后导出:辐射照度E与半导体温度集成镜象对管结电压差值的改变量△(△VBE)线性关系式。本文可以作为研制半导体集成辐射传感器的理论依据。

In this paper, a new design of radiation sensor——The Semiconductor Integrated Radiation Sensor, is Presented and a systematic analysis of its basic principles was given. It has come to the conclusion that there is a linear relation between the irradiance E and the Variation of differential value'of p—njunction, voltage Δ(ΔV_(BE)) of semiconductor temperature integrated image pair transisor. This paper provides a theoretical basis for the constitution of a Semiconductor Integrated Radiation Sensor.