用熔体外延法生长的截止波长10μm以上的InAsSb单晶

InAsSb SINGLE CRYSTALS WITH CUTOFF WAVELENGTH LONGER THAN 10μm GROWN BY MELT EPITAXY

用熔体外延法,在液相外延系统中,在InAs衬底上成功地生长出了截止波长为11μm的InAsSb单晶.虽然使用液相外延设备,但熔体外延具有不同于液相外延等常规晶体生长方法的创新生长工艺.红外傅里叶光谱测量证明InAsSb材料的截止波长超过10μm.X射线衍射光谱揭示InAsSb外延层具有相当完美的晶体取向结构,且与InAs衬底取向一致,均为(100)方向.霍尔测量结果给出295K下,InAsSb的电子迁移率为4.75×104cm2/Vs,截流子浓度为3.61×1016cm-3;77K下电子迁移率为2.86×104cm2/Vs,载流子浓度为1.50×1016cm-3.数据显示这种材料具有研制新型探测器的良好前景.

The InAsSb single crystals with a cutoff wavelength of 11 μm were successfully grown on InAs substrates by melt epitaxy. Infrared Fourier spectrum measurement confirms that the cutoff wavelength of InAsSb materials is longer than 10 μm. X-ray diffraction spectrum reveals that InAsSb epilayers have fairly perfect crystal orientation structure, and have the same crystal orientation as that for the InAs substrates, i.e., orientation. Hall measurements show that the electron mobility is 4.75 × 104 cm2/Vs and the carrier density is 3.61 × 1016 cm-3 at 295 K, and the electron mobility is 2.86 × 104 cm2/Vs and the carrier density is 1.50 × 1016 cm-3 at 77 K. The results show that the material has a potential application for fabricating the photodetectors.