应用激光闪光法测定半导体融体的热扩散率

THERMAL DIFFUSIVITY MEASUREMENTS OF SEMICONDUCTOR MELTS BY LASER FLASH METHOD

本文开发了半导体融体的热扩散率的测量装置。通过引入石英玻璃试样容器将激光闪光法扩展到适合于融体试样。首先在实验及理论上研究了石英玻璃层对试样的热辐射及温度相应的影响,结果发现在室温以上温度范围,石英玻璃层的存在只减小红外辐射探测器的信号幅度但不改变时阃变化历程。由闪光法的原理,包含石英玻璃层的复合试样则可以作为单层试样处理。根据这一原理,我们首次对三元红外半导体融体In1-xGaxSb在不同组分时,温度范围800K至1200 K的热扩散率进行了测量。

The laser flash method is extended to measure the thermal diffusivities of semiconductor melts by confining the melt specimens to transparent quartz containers. The effect of quartz layer is investigated experimentally by using a specimen cell layered by stainless steel and quartz pieces. The effect of quartz layer on thermal radiation is calculated. The temperature responses of single-layer specimen and specimen cell with quartz layer are measured for various quartz-layer thicknesses. The comparisons of these results show that the quartz-layer does not affect the rise-time but only the amplitude of the IR radiation signal. By using this method, the thermal diffusivities of In1-xGaxSb mixed semiconductor melts have been measured at the temperature range from 800 K to 1200 K.