摘要
在溶胶-凝胶法制备的La0.67 Ba0.33MnO3(LBMO)微粉中掺入Ag2O粉,制成一系列(LBMO)/(Ag2O)x/2(x=0～O.35,为摩尔比)掺杂材料,实验结果发现Ag掺杂可明显降低材料的电阻率.当掺Ag量为x=O.25时,样品的电阻率达到最低值.同时在居里点附近,样品的峰值磁电阻得到显著增强.微量的Ag掺杂有助于提高样品的自旋相关隧穿磁电阻,使低场磁电阻得到显著增强.
A series of samples (LBMO)/(Ag2O)x/2(x = 0-0.35, the mol ratio) have been prepared by mixing Ag2O with La0.67Ba0.33MnO3 (LBMO) powder synthesized by the sol-gel method. The experimental results indicate that doping Ag can reduce the resistivity of materials evidently. When x = 0.25, resistivity of the sample reaches the minimum, while the peak magnetoresistance near Curie temperature was strengthened obviously. A small amount of Ag addition favors for the magnetoresistance effect related to the spin-dependent tunneling process, and remarkably enhances the low-field magnetoresistance.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第1期32-34,共3页
Journal of Functional Materials
基金
国家重点基础研究专项经费资助项目(G19980613010)
关键词
庞磁电阻效应
低场磁电阻
颗粒体系
两相复合结构
导电陶瓷
Barium compounds
Colossal magnetoresistance
Doping (additives)
Lanthanum compounds
Silver
Sol
gels
