低维半导体材料应变分布

The strain distribution of low-dimensional semiconductor materials

在各向同性弹性理论的假设下 ,探讨了理想简单化的二维、一维与零维半导体材料量子阱、量子线与量子点的应力和应变分布规律 ,并讨论了它们应力、应变与应变能密度分布之间的差异 .结果有助于定性理解更复杂形状结构的低维半导体材料的应力。

The stress and strain distributions of simplified and idealized two-,one- and zero-dimensional semiconductor materials, i.e. quantum well,quantum wire and quantum dot are investigated based on the isotropic theory of elasticity,and the differences among the stress,strain and strain energy distributions for the materials are discussed. The results can help us to understand qualitatively the stress,strain and strain energy distributions of the more complicated shapes and structures of low-dimensional semiconductor materials.