含有δ掺杂层的SiGe pMOS量子阱沟道空穴面密度研究

Hole-sheet-density in SiGe pMOS quantum well with δ-doping-layer

建立了含有δ掺杂层的SiGepMOS器件量子阱沟道中空穴面密度的静态与准静态物理模型 ,并对该模型进行了数值分析 .讨论了静态时器件量子阱空穴面密度与δ掺杂层杂质浓度和本征层厚度的关系 ,阈值电压VT 与δ掺杂层杂质浓度NA、量子阱沟道载流子面密度Ps 及本征层厚度di 等参数间的关系 .同时还讨论了准静态时量子阱空穴面密度P′s

In this paper,static state and quasi-static state models of quantum well channel hole-sheet-density of SiGe p-metal-oxide-semiconductor with δ -doping-layer are established and analyzed. The relations between hole-sheet-density and δ -doping-layer concentration,between hole-sheet-density and un-doping layer thickness at static state are also discussed,and the relations of the threshold voltage to the δ -doping-layer concentration,the quantum-well channel hole-sheet-density and the thickness of the un-doping layer are discussed. At last,the relation of the quantum-well channel hole-sheet-density to gate-voltage for the quasi-static state is discussed.