能级填充对量子阱光学性质的影响

Influence of level filling on optical properties of quantum well

在特殊设计的三势垒双势阱结构中 ,利用来自发射极的电子注入和电子向收集极的共振隧穿逃逸调控量子阱不同子能级上的填充状态 ,发现激发态上的电子占据起抑制量子限制Stark效应的作用 .在极低偏压下 ,量子阱中少量过剩电子诱发了用简单带—带跃迁无法解释的光致发光光谱行为 .

In a specially-designed three-barrier-double-well tunneling structure,electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. It was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement Stark effect. Moreover,at very low bias,a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well,that cannot be explained by the theory of band-to-band transition in the framework of single electron picture.