等离子体增强化学气相沉积法实现硅纳米线掺硼

Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition

用等离子体增强化学气相沉积 (PECVD)方法成功实现硅纳米线的掺B .选用Si片作衬底 ,硅烷 (SiH4 )作硅源 ,硼烷 (B2 H6 )作掺杂气体 ,Au作催化剂 ,生长温度 4 4 0℃ .基于气 液 固 (VLS)机制 ,探讨了掺B硅纳米线可能的生长机制 .PECVD法化学成分配比更灵活 ,更容易实现纳米线掺杂 ,进一步有望生长硅纳米线pn结 。

Boron-doped (B-doped) silicon nanowires have been successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440℃ using silane as the Si source,diborane(B 2H 6) as the dopant gas and Au as the catalyst. It is desirable to extend this technique to the growth of silicon nanowire pn junctions because PECVD enables immense chemical reactivity.