钨硅化物溅射靶的研制

Development of Tungsten Disilicide for Sputtering Target

用粉末冶金工艺制造钨硅化物溅射靶已为人们所熟知,本文提及的以自传播高温合成技术制取较好的基材—高纯钨硅的包复粉末是值得注意的一种工艺路线,它使产品具有较高的纯度密度及较低的电阻率。

The manutacture of tungsten disihcide for sputtering target by powder metallurgy is well known. The self-propagating high temperature synthesis mentioned in this paper, by which the better matrix material-high pure tungsten and silicon clad powder is manufactured, is an attractive technologic route and makes the products higher in purity and density, lower in electric resistance.