期刊文献+

铁磁形状记忆合金Ni-Mn-Ga单晶的马氏体孪晶再取向应力应变行为 被引量:10

MARTENSITIC TWINS REORIENTATION AND STRESSSTRAIN BEHAVIOR OF FERROMAGNETIC SHAPE MEMORY ALLOYS Ni-Mn-Ga SINGLE CRYSTALS
下载PDF
导出
摘要 采用定向凝固区熔法制备了铁磁形状记忆合金Ni53Mn23.5Ga23.5,Ni54Mn23Ga23和Ni50Mn27Ga23晶体.用线切割切取5 mm×5 mm×6 mm的长方体单晶,X射线极图法测定单晶体的生长方向与[100]方向相差小于5°.沿单晶试样的3个边分别进行压缩实验,研究马氏体孪晶再取向应力应变行为.结果表明,沿单晶生长方向为孪晶再取向最有利方向,孪晶再取向应力最小,仅为3-7 MPa.压缩能有效地提高马氏体变体的有序化和择优化,形成近单变体状态. Ferromagnetic shape memory alloys Ni53Mn23.5Ga23.5, Ni54Mn23Ga23 and Ni50Mn27Ga23 single crystals were prepared by zone-melting unidirectional solidification. The orientations of the cut single crystals were determined by X-ray diffraction method. The Ni-Mn-Ga crystal growth direction is along [100] with the deviation less than 5degrees. The martensitic twins reorientation process was detected by the stress-strain curves. The compression experiments along different directions were performed, respectively. The results show that the compression improves the texture of favorable martensitic variants and turns them into a single martensitic variant by martensite reorientation.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2004年第12期1290-1294,共5页 Acta Metallurgica Sinica
基金 国家自然科学基金资助项目50271002 50131010
关键词 形状记忆合金 NI-MN-GA 马氏体孪晶 应力-应变 shape memory alloy Ni-Mn-Ga martensitic twin stress-strain
  • 相关文献

参考文献12

  • 1Webster P J, Ziebeck K R A, Town S L, Peak M S. Philos Mag, 1984; 49B: 295
  • 2Ullakko K, Huang J K, Kokorin V V, O' Handley R C.Scr Mater, 1997; 36:1133
  • 3Jiang B H, Zhou W M, Liu Y, Qi X. Mater Sci Forum,2003; 426-432:2285
  • 4Gao Z Y, Cai W, Zhao L C, Wu G H, Chen J L, Zhan W S. Trans Nonferrous Met Soc Chin, 2003; 13(1): 42
  • 5Murray S J, Marioni M, Allen S M, O' Handley R C. Appl Phys Lett, 2000; 77:886
  • 6Sozinov A, Likhachev A A, Lanska N, Ullakko K. Appl Phys Lett, 2002; 80:1746
  • 7Wu G H, Wang W H, Chen J L, Ao L, Liu Z H, Zhan W S. Appl Phys Lett, 2002; 80:634
  • 8O'Handley R C. J Appl Phys, 1998; 83:3263
  • 9Sozinov A, Likhachev A A, Ullakko K. IEEE Trans Magn,2002; 38:2814
  • 10Murray S J, O'Handley R C, Allen S M. J Appl Phys,2001; 89:1295

同被引文献246

引证文献10

二级引证文献22

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部