P型CuAlO_2半导体陶瓷的烧结研究

P-type CuAlO_2 semiconductor ceramic material prepared by sintering

性能良好的陶瓷靶材是溅射法制备薄膜的先决条件。本文以纳米级Al2 O3 粉体和微米级Cu2 O粉体为原料通过烧结的方法制备了P型透明导电氧化物陶瓷CuAlO2 。以X射线衍射和SEM分析的方法研究了烧结温度对反应进行的影响 ,并在合适的温度区间里得到了具有较好P型半导体性能的陶瓷 ,其迁移率达到 2 7cm2 ·V-1·s-1。以它作为靶材通过真空溅射得到了迁移率为 2 1cm2

Ceramic target material with good performance is a prerequisite for film preparation by sputtering. Using Al2O3 (nanosize) and Cu2O (micron size) powders as raw material, a P-type transparent conducting oxide ceramic material, CuAlO2, was prepared by sintering in Ar atmosphere. The effect of sintering temperature on the reaction was investigated by means of XRD and SEM. A P-type semiconductor material with good performance was obtained by sintering at appropriate temperature range with mobility being 27 cm2·V-1·s-1. Taking the semiconductor material as a target, a P-type transparent semiconductor film was obtained by vacuum magnetron spuffering with mobility being 2.1 cm2·V-1·s-1.