980 nm高功率列阵半导体激光器

980nm High Power Array Semiconductor Lasers

分析了影响列阵半导体激光器输出功率的因素．利用分子束外延生长方法生长出ＩｎＧａＡｓ／ＧａＡｓ应变量子阱激光器材料．利用该材料制作出的应变量子阱列阵半导体激光器准连续（１００ Ｈｚ，１００ μｓ）输出功率达到 ８０Ｗ（室温），峰值波长为 ９７８～９８１ｎｍ．

The facts which have influenced over the ultimate output power of laser diodes was analyzed in this paper. The InGaAs/GaAs material with strain quantum well structure has been grown by MBE. Array semiconductor laser QCW output power achieves 80 W(100 Hz,100μs, room temperature). The peak wavelength is 978~981 nm.