基于PSPICE仿真的IGBT功耗计算

IGBT power loss estimation based on PSPICE simulation

结合无刷直流电机控制器的设计,提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT(InsulatedGateBipolarTransistor)功率损耗的估算方法。建立了IGBT电路仿真模型,给出了IGBT功率损耗与开关频率和栅极电阻阻值之间关系的仿真结果。最后,给出了功率损耗的计算方法,对不同开关频率和不同栅极电阻时的功率损耗进行了定量计算。结果表明,增大开关频率和栅极电阻会使IGBT的功率损耗增加。

Combined with the design of brushless DC electric motor controller,a method to estimate power loss of IGBT(Insulated Gate Bipolar Transistor) based on PSPICE simulation is proposed. The circuit model for IGBT simulation is provided. The relationships between IGBT power loss and the switch frequency and between IGBT power loss and grid resistance are presented. The calculation method is offered and the power losses under different switch frequencies and grid resistances are quantified. The results show that the power loss will rise as switch frequency or grid resistance increased.