摘要
简要介绍了太阳电池的基本工作原理和辐射损伤机理。利用二维半导体器件数值模拟软件MEDICI,模拟计算了1MeV高能电子在辐射通量范围为1×1013～1×1015cm2时,对GaAs太阳电池主要输出参数(如开路电压Voc,短路电流Isc)的影响,并对计算结果进行了分析,计算结果与相关文献给出的实验数据吻合较好。
The basic radiation effects of solar cell are introduced briefly in this paper. Then we simulate the output characteristics of p-GaAs solar cell, e.g. the short circuit current I(sc), and the open circuit voltage V(oc), by 1MeV electron radiation with the two-dimensional device simulation software - MEDICI. The simulation results are perfectly agreement with the experimental data.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2005年第1期97-99,103,共4页
Nuclear Electronics & Detection Technology
