集成CMOS限幅放大器的研究

Study of integrated CMOS limiting amplifier

提出了一种具有低通网络的高速放大器拓扑,基于增益带宽约束条件和低通网络的特性的研究对高速放大器进行了优化设计.此外,基于中芯国际集成电路公司提供的0.18μm器件模型、共面线的分布参数模型,文中分别研究了共面线的频变分布参数、负载电阻以及n沟道MOSFET的栅宽对放大器增益、带宽的影响,为高速限幅放大器的优化设计提供了理论指导和设计依据.

A high-speed amplifier topology with low-pass filter network and its optimization design methodology based on the theory of gain bandwidth restricting condition and the characteristic analysis for low-pass network are proposed in this paper. Furthermore, the effects such as frequency-dependent distributed parameters of coplanar transmission line, the load resistance and the width of n channel MOSFET on gain bandwidth of the amplifier have been investigated by means of the 0.18μm device model provided by SMIC and the model of coplanar transmission line. It provides some useful design theory and design rules for the optimization design of high-speed amplifier.