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Design and Realization of Resonant Tunneling Diodes with New Material Structure 被引量：1

一种新材料结构的RTD器件的设计及实现(英文)
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摘要 A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs. 设计了一种带有Al0 .2 2 Ga0 .78As/In0 .15Ga0 .85As/GaAs发射极空间层和GaAs/In0 .15Ga0 .85As/GaAs量子阱的共振隧穿二极管 (RTD)材料结构 ,并且成功地制作了相应的RTD器件 .在室温下 ,测试了RTD器件的直流特性 ,计算了RTD器件的峰谷电流比和可资电流密度 .在分析器件特性的基础上 。
作者 王建林 王良臣 曾一平 刘忠立 杨富华 白云霞
机构地区 中国科学院半导体研究所微电子研发中心 中国科学院半导体研究所光电子研发中心 中国科学院半导体研究所新材料部 中国科学院半导体研究所超晶格与微结构国家重点实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期1-5,共5页 半导体学报（英文版）
基金 国家重点基础研究专项经费 (批准号 :G0 0 1CB3 0 95 ) 中国科学院资助项目~~
关键词 resonant tunneling diodes quantum effect DC characterization 共振隧穿二极管 量子效应 直流特性
分类号 TN312.2 [电子电信—物理电子学]
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参考文献12

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同被引文献10

  • 1王建林,刘忠立,王良臣,曾一平,杨富华,白云霞.RTD与PHEMT集成的几个关键工艺[J].Journal of Semiconductors,2005,26(2):390-394. 被引量：2
  • 2MAEZAWA K, AKEYOSHI T, MIZUTANI T. Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals [ J]. IEEE Trans on ED,1994,41(2):148-154.
  • 3IBERGMAN J, CHANG J, JOO Y, et al. RTD/ CMOS nanoelectronic circuits:thin-film inp-based resonant tunneling diodes integration with CMOS circuits [ J ]. IEEE EDL, 1999,20 (3) :119-122.
  • 4CHEN C L, MAHONEY L J, CALAWA S D, et al. Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique [J]. IEEE EDL, 1998, 19 (12) :478-480.
  • 5CHEN C L,MATHEWS R H,MAHONEY L J,et al. New self- aligned planar resonant-tunneling diodes for monolithic circuits [J].IEEE EDL, 1997,18 (10) : 489-491.
  • 6MASAHIRO T, HIROYUKI S, JUNJI Y, et al. Room temperature observation of differential negative resistance in an AlAs/GaAs/AlAs resonant tunneling diode [ J ]. JJAP, 1985,24 (6) : L466-L468.
  • 7MASAHIRO T , HIROYUKI S. Precise control of resonant tunneling current in AlAs/GaAs/AlAs double barrier diode with atom ically-controlled barrier widths [ J ]. JJAP, 1985,24 (6) :L185-L187.
  • 8SEN S, CAPASSO F, SIVCO D , et al. New resonant tunneling devices with maltiple negative resistance regions and high room-temperature peak-to-valley ratio[J]. IEEE EDL, 1988,9 (8) :402-424.
  • 9李国辉,姬成周,刘伊犁,罗晏,韩德俊.GaAs中的离子注入技术[J].原子核物理评论,1997,14(3):177-180. 被引量：1
  • 10张世林,郭维廉,梁惠来,侯志娟,牛萍娟,赵振波,郭辉.共振隧穿二极管(RTD)I-V特性的几个问题[J].固体电子学研究与进展,2003,23(3):329-333. 被引量：8

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Journal of Semiconductors
2005年 第1期

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