MOCVD法以NO气体为掺杂源生长p型ZnO薄膜

MOCVD Growth of p-Type ZnO Thin Films by Using NO as Dopant Source

采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻p型ZnO薄膜 .实验使用NO和N2 O共同作为氧源 ,且NO同时作为掺氮源 ,二乙基锌作为锌源 .X射线衍射测试表明薄膜具有c轴择优取向的结构特性 ,二次离子质谱分析证实了氮被掺入了ZnO薄膜 .通过优化锌源流量获得了最高空穴浓度为 1 97× 10 18cm-3 ,最低电阻率为 3 0

Nitrogen-doped p-type zinc oxide (ZnO) thin films are deposited on glass substrates by metalorganic chemical vapor deposition.Both NO and N 2O are used as oxygen source,and NO is also used as N dopant source.Diethylzinc (DEZn) is used as zinc precursor.X-ray diffraction shows that the films have high crystal quality with (002)-preferred orientation.Second-ion mass spectroscopy demonstrates that N is doped into the thin films.Hall measurement shows that the lowest resistivity and hole concentration are 3.02Ω·cm and 1.97×10 18cm -3,respectively.