摘要
研究了LEC法生长SI GaAs衬底上的AB微缺陷对相应的MESFET器件性能 (跨导、饱和漏电流、夹断电压 )的影响 .用AB腐蚀液显示AB微缺陷 (AB EPD :10 3 ～ 10 4cm-2 量级 ) ,用KOH腐蚀液显示位错 (EPD :10 4cm-2 量级 ) ,发现衬底上的AB微缺陷对器件性能及均匀性有显著影响 .随着AB EPD的增大 ,跨导、饱和漏电流变小 ,夹断电压的绝对值也变小 .利用扫描光致发光光谱 (PLmapping)对衬底质量进行了测量 ,结果表明衬底参数好的样品 ,PL参数好 ,相应器件的参数也好 。
It is studied that the influence of AB microdefects in semi-insulating GaAs substrate grown by LEC on the property of MESFET devices including transconductance (g m),saturated drain current (I dss),and pinch-off voltage (V p) .Dislocations and AB microdefects are shown by KOH solution and AB solution respectively,indicating that the average AB-EPD ranges from 10 3 to 10 4cm -2,while the average EPD is of the order of 10 4cm -2.It shows that AB microdefects have a significant influence on the property of MESFET devices:as AB-EPD increases,g m,I dss,and absolute value of V p decreases,respectively.In addition,the substrate quality is studied with PL mapping whose results prove that the sample with better substrate quality has better PL parameters as well as better device parameters.
基金
国家自然科学基金 (批准号 :60 2 760 0 9)
中国人民解放军总装备部预研资金 (批准号 :0 0JS0 2.2.1QT45 0 1)
河北省自然科学基金 (批准号 :5 990 3 3 )资助项目~~
