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100mm InGaP/GaAs HBT及相关电路关键工艺 被引量：1

Key Processes for Fabrication of Self-Aligned InGaP/GaAs HBT Device and Circuit
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摘要 对 10 0mmIn0 .49Ga0 .51P/GaAsHBT器件及相关电路制备中的In0 .49Ga0 .51P腐蚀问题、聚酰亚胺平面化、空气桥等几项关键工艺进行了研究 ,解决了器件及电路制备过程中出现的难题 ,尤其是用很简单的方法解决了In0 .49 Ga0 .51P腐蚀过程中经常出现的腐蚀“岛”问题 。 The key process-InGaP etching,polymide planarization process,and air-bridge for fabrication of self-aligned InGaP/GaAs HBT devices and circuits are studied.The problems,especially the formation of the “island” nearby the emitter contact during the etching of InGaP,are resolved.InGaP/GaAs HBT devices and circuits with good performances have been obtained.
作者 石瑞英 孙海锋 刘训春 刘洪民
机构地区 四川大学物理系 中国科学院微电子研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期106-110,共5页 半导体学报（英文版）
基金 国家重点基础研究发展计划资助项目 (批准号 :G2 0 0 0 0 683 0 40 3 )~~
关键词 In0.49Ga0.51P腐蚀 聚酰亚胺平面化 空气桥 island formation polymide planarization process air-bridge
分类号 TN385 [电子电信—物理电子学]
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参考文献5

  • 1石瑞英,刘训春.用新的电路形式提高HBT光调制器驱动电路的传输速率及性能[J].Journal of Semiconductors,2003,24(5):534-538. 被引量：2
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二级参考文献10

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共引文献1

同被引文献11

  • 1白大夫,刘训春,王润梅,袁志鹏,孙海锋.高性能新结构InGaP/GaAs异质结双极型晶体管(英文)[J].Journal of Semiconductors,2004,25(7):756-761. 被引量：6
  • 2Portilla J, Fuente M L, Pascual J P, et al. Low-noise monolithic Ku-band VCO using pseudomorphic HEMT technology. IEEE Microw Guided Wave Lett, 1999,7:380
  • 3Rogers J W M, Macedo J A, Plea C, The effect of varactor nonlinearity on the phase noise of completely integrated VCOs, IEEE J Solid-State Circuits,2000,35 :1360
  • 4Michael G C,Johannes K N. A 3.3-V 21-Gb/s PRBS generator in AIGaAs/GaAs HBT technology. IEEE J Solid-State Circuits ,2000,3 : 1266
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  • 6Asbeck P,Chang F,Wang K C,et al. GaAs-based heterojunction bipolar transistors for very high performance electronic circuits. Proc IEEE, 1993,81: 1709
  • 7Rodwell M J W, Urteaga M, Mathew T, et al. Submicron scaling of HBTs. IEEE Trans Electron Devices, 2001,48:2606
  • 8Hattendorf M L, Hartmann Q J, Feng M. Incorporation of an alloy-though passivating-ledge process into a fully self-a-ligned InGaP/GaAs HBT process. GaAs MANTECH, Inc,2001
  • 9Lour W S. High-gain,low offset voltage,and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor. IEEE Trans Electron Devices, 1997,44 : 346
  • 10Cheng S Y. Analysis of improved dc and ae performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1-xAs layer at emitter/base heterojunction. Solid-State Electron, 2004,48 : 1087

引证文献1

Journal of Semiconductors
2005年 第1期

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