摘要
在同一HgCdTe晶片上制备了单层ZnS钝化和双层 (CdTe +ZnS)钝化的两种光伏探测器 ,对器件的性能进行了测试 ,发现双层钝化的器件具有较好的性能 .通过理论计算 ,分析了器件的暗电流机制 ,发现单层钝化具有较高的表面隧道电流 .通过高分辨X射线衍射中的倒易点阵技术研究了单双层钝化对HgCdTe外延层晶格完整性的影响 ,发现单层ZnS钝化的HgCdTe外延层产生了大量缺陷 。
The HgCdTe photovoltaic detectors passivated by single ZnS layer and dual (CdTe+ZnS) layers are fabricated on the same wafer.The fabricated devices are characterized by measurements of the diode dark I-V characteristic.The dual-layer passivated diodes show higher performing compared to the single layer passivated diodes,and modeling of diode dark current mechanisms indicate that the performance of the diodes passivated by single ZnS is strongly affected by tunneling current related to the surface defects,which are generated by the technology of passivation.And the result is also supported by the analysis of X-ray reciprocal space map.
关键词
HGCDTE
光伏探测器
钝化
倒易点阵
暗电流
HgCdTe
photovoltaic detector
passivation
reciprocal space map
dark current
