期刊文献+

Investigation progress on key photonic integration for application in optical communication network 被引量:3

Investigation progress on key photonic integration for application in optical communication network
原文传递
导出
摘要 Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The investigation progress in the laboratory will be introduced. Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The investigation progress in the laboratory will be introduced.
作者 王启明
出处 《Science in China(Series F)》 2003年第1期60-66,共7页 中国科学(F辑英文版)
基金 This work was supported by the National Natural Science Foundation of China (Grant No. 69896260) the Major State Basic Research program under Grant No. 2000036601-605.
关键词 optical network photonic integration active devices passive devices. optical network, photonic integration, active devices, passive devices.
  • 相关文献

参考文献1

二级参考文献21

  • 1Lai Q,Hunziker W.Low - power compact 2 ×2 thermoopticsilica - on - silicon waveguide switch with fastresponse. IEEE Photonics Technology Letters . 1998
  • 2Park JS,Karurasiri RPG,Wang K L.Observation oflargeshiftin Si1 - x Gex multiple quantum wells. Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures . 1990
  • 3Soref R A,Schmidtchen J,Petermann K.Large single-moderib waveguidesin GeSiand Si- on- SiO2. IEEEJ.of Quantum Electronics . 1991
  • 4Oh M C,Hwang W Y,Lee H M,etal.Electrooptic polymer modulatorsoperatingin both TEand TM modesincorporating a vertically tapered cladding. IEEEPhotonics Technology Letters . 1997
  • 5Soref RA.Electro- opticaland nonlinear opticalcoefficientsof ordered group Ⅳsemiconductor alloys. Journal of Applied Physiology . 1992
  • 6Thackrar JL,Lipscomb G F,Stiller M A,et al.Poledelectro -optical waveguideformationinthinfilm organicmedia. Applied Physics Letters . 1998
  • 7Splett A,Petermann K.Low loss single - mode opticalwaveguides withlargecross-sectioninstandardepitaxialsilicon. IEEE Photonics Technology Letters . 1994
  • 8Soref RA,ShaparZF,Robinsin M,etal.Infrared waveguidingin Si1- x- yGexCy upon silicon. Optics Letters . 1996
  • 9Lin LY,Goldstein EL,Tkach R W.Free- space micromachined optical switch submillisecond switchingtime for large - scale optical crossconnects. IEEE Photonics Technology Letters . 1998
  • 10Giguere SR,Friedman L,Soref RA.Stimulationstudiesofsilicon electro - optic waveguide devices. Journal of Applied Physiology . 1990

共引文献10

同被引文献13

  • 1[3]Qiming Wang, Cheng Li, Buwen Cheng, Qinqing Yang,Si-based resonant- cavity-enhanced photodetector, Opt.Eng., 40(7), 1-3,2001.
  • 2[4]Cheng Li, Qinqing Yang, Hongjie Wang, Jialian Zhu, Liping Luo, Jinzhong Yu, Qiming Wang, Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon on oxide reflector operating near 1.3 μm, Appl. Phy. Lett, 77(2), 157-159 (2000)
  • 3[5]Cheng Li, Qinqing Yang, Hongjie Wang, Jinzhong Yu,Qiming Wang, Yong Kang Li, Junming Zhou, Hui Huang,Xiaoming Ren, Back-incident SiGe/Si multiple quantum well resonant-cavity-enhanced photodetector for 1. 3 (m operation, IEEE Photonics Technology Letters, 12(10),1373-1375(2000)
  • 4[6]Zuo Y. H., Huang C. J., Chai X.,et al. 1.55 (m Sibased MOEMS optical tunable filter. Chinese Optics Letters, 2003, 1(9): 529-531.
  • 5[7]Zuo Y. H., Huang C. J., Chai X.,et al.1.3 (m Sibased MOEMS optical tunable filter with a tuning range of 90 nm. Chinese Journal of Semiconductors, 2003, 24(11): 1140-1143.
  • 6[10]Xiaolong Wang, Jingwei Liu, Qingfeng Yan, Shaowu Chen, Jinzhong Yu. SOI thermo-optic modulator and switch with fast response, J. Chinese Semiconductors,to be accepted.
  • 7[11]Hongzhen Wei, Jinzhong Yu, Zhongli Liu,et al. Changshui Fang. 1(4 MMI splitter based on SOl waveguide, Chinese J. of Lasers, B9(6), 525-530 (2001)
  • 8[12]Hongzhen Wei, Jinzhong Yu, Zhongli Liu,et al. Wei Shi,Changshui Fang, Fabrication of 4 (4 tapered multimode interference coupler with large cross section, IEEE Photon. Technol. Lett., 13(5), 466-468 (2001)
  • 9[13]Lin Yang, Yuliang Liu, Yi Cheng, Wei Wang, Qiming Wang. Fabrication of thermo-optic variable optical attenuators based on multimode interference coupler principle,Optical Engineering Lett., 42, 606-607 (2003)
  • 10钱敏,程继萌,胡丽丽.Dependence of spectroscopic properties on doping content and temperature of bismuth-doped lanthanum aluminosilicate glass[J].Chinese Optics Letters,2012,10(11):60-64. 被引量:1

引证文献3

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部