摘要
为了制备应用于太阳电池的优质多晶硅薄膜,研究了非晶硅薄膜的快速光热退火技术。先利用 PECVD 设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。研究表明退火温度、退火时间对非晶硅薄膜的晶化都有很大的影响,光热退火前先用常规高温炉预热有助于增大多晶硅薄膜的晶粒尺寸和暗电导率。
The RTA technique for crystallization of a-Si:H thin films was studied in order to prepare high quality polycrystalline silicon(poly-Si) thin films applied for poly-Si thin-film solar cells. The a-Si:H thin films were deposited by PECVD and then were annealed in RTA furnace .The microstructure ,morphology and electric property of thin films were investigated by XRD, SEM and dark conductivity measurements. The results show that the annealing temperature and annealing time have a great effect on the crystallization of a-Si:H thin films. In addition, the grain size and dark conductivity of poly-Si thin films can be increased through preheating in traditional furnace before RTA.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第2期26-28,31,共4页
Electronic Components And Materials
基金
河南省自然科学基金资助项目(004040200)
关键词
半导体材料
快速光热退火
非晶硅薄膜
多晶硅薄膜
晶粒尺寸
暗电导率
semiconductor materials
rapid thermal annealing(RTA)
amorphous silicon thin film
polycrystalline silicon thin film
grain size
dark conductivity
