摘要
低压MOCVD方法生长了垒层掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响。测试结果表明垒层掺Si使量子阱的生长速度增加,掺Si 量子阱的光荧光强度比未掺Si量子阱的光荧光强度增强了13倍。
AlGaInP:Si/GaInP and AlGaInP/GaInP MQW structures were grown by LP-MOCVD. The effect of Si-doping on the characteristics of AlGalnP/GalnP MQW was studied by using double crystal X-ray diffraction and photoluminescence. The results show that the growth rate of MQW increases with Si-doping and the intensity from MQW with Si-doped is strong as 13 times as that of undoped MQW.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第2期10-12,20,共4页
Semiconductor Technology
基金
广州市科技重点计划项目(1999-2-035-1)资助
关键词
X双晶衍射
MOCVD
量子阱
光荧光
double crystal X-ray diffraction
MOCVD
QW
photoluminescence
