摘要
AuSn20是用于微电子器件封装的一种重要金基钎料,由于加工性能差,AuSn20难于制成箔材。本文介绍了采用新工艺制备的厚度为0.02～0.10mm的AuSn20箔材及焊环、复合盖板等零件,其熔点为280±3℃,接头剪切强度为47.5MPa,热导率为57W/mK,漫流性能优良。该AuSn20钎料可用于互联网系统芯片焊接和电路封装以及高可靠功率微波器件中Si芯片和GaAs芯片焊接和线路的气密封装。
The AuSn20 alloy is an important Au-base solder for the sealing package of microelectronics. Because of poor workability, it is not easy to produce AuSn20 foil. The present paper introduced the AuSn20 foil of 0.02～0.10mm in thickness and the components, such as the ring-like profile foil and the compound plate manufactured by a new process. The melting point of AuSn20 solder was 280±3℃, the shearing strength of the joint was 47.5MPa, the heat conductivity was 57 W/mK, the fluidity was excellent. This AuSn20 solder could be used for chip brazing and circuit package in internet system and for Si and GaAs chip brazing and gas-tight package for high reliable power micro-wave devices.
出处
《贵金属》
CAS
CSCD
2005年第1期62-65,共4页
Precious Metals
基金
云南省科技攻关项目(2001GG07)
