摘要
给出了fT为15 GHz的SiGe HBT器件的高频小信号等效电路模型;运用微波网络理 论,在Matlab软件平台上模拟出器件的S参数和H21参数曲线,模拟结果与实测结果相吻合;根据 电路的拓扑结构,分析了管壳封装带来的寄生参数对器件高频性能的影响;根据稳定性判据,计算 了器件的稳定性与工作频率之间的关系。为器件的设计和应用提供了理论依据。
A high-frequency and small-signal equivalent circuit of SiGe HBT is presented in this paper. By using microwave network theory, S and H21 parameters of the device are simulated. Results from simulation are in good agreement with those from test. Furthermore, effects of package-induced parasitic parameters on the high-frequency characteristics are analyzed based on the circuit architecture. The relationship between operating frequency and stability of the device is given according to the judging criterion of stability. This will provide a method for computer-aided design of new devices.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第1期1-4,共4页
Microelectronics
基金
北京市自然科学基金资助项目(4032005)
关键词
锗硅合金
异质结双极晶体管
电路模型
模拟
SiGe alloy
Heterojunction bipolar transistor
Circuit model
Simulation
