摘要
文章在分析短沟道效应和漏致势垒降低(DIBL)效应的基础上,通过引入耦合两效应的 相关因子,建立了高k栅介质MOSFET阈值电压的器件物理模型。模拟分析了各种因素对阈值电 压漂移的影响,获得了最佳的k值范围。
Based on analysis on short-channel effect and drain induced barrier lowering (DIBL) effect, a threshold voltage model for high-k MOSFET's is etablished by introducing a coefficient that interrelates the two effects. Influences of various factors on threshold voltage shift are simulated and investigated, and the optimal range of k values is obtained.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第1期40-43,共4页
Microelectronics
基金
国家自然科学基金(60376019)湖北省自然科学基金资助项目(2003ABA087)