期刊文献+

深亚微米MOSFET阈值电压模型 被引量:3

Threshold Voltage Model for Deep-Submicrometer MOSFET's
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摘要 文章在分析短沟道效应和漏致势垒降低(DIBL)效应的基础上,通过引入耦合两效应的 相关因子,建立了高k栅介质MOSFET阈值电压的器件物理模型。模拟分析了各种因素对阈值电 压漂移的影响,获得了最佳的k值范围。 Based on analysis on short-channel effect and drain induced barrier lowering (DIBL) effect, a threshold voltage model for high-k MOSFET's is etablished by introducing a coefficient that interrelates the two effects. Influences of various factors on threshold voltage shift are simulated and investigated, and the optimal range of k values is obtained.
出处 《微电子学》 CAS CSCD 北大核心 2005年第1期40-43,共4页 Microelectronics
基金 国家自然科学基金(60376019)湖北省自然科学基金资助项目(2003ABA087)
关键词 MOSFET 短沟道效应 漏致势垒降低效应 高K栅介质 MOSFET Short-channel effect DIBL High-k gate dielectric
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参考文献10

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共引文献7

同被引文献38

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