C/C和C/C-SiC复合材料的氧化及烧蚀性能

Oxidation and Ablation Behavior of Carbon/Carbon and Carbon/Carbon-SiC Composites

用液相浸渍 裂解聚硅烷工艺制备了C C SiC复合材料,对比了C C与C C SiC复合材料的氧化及烧蚀性能,用扫描电镜(SEM)和X射线衍射(XRD)分析了氧化与烧蚀前后的微观结构及物相变化.结果表明:C C SiC复合材料使C C复合材料的氧化起始温度从500℃提高到700℃;在600℃和700℃恒温氧化条件下,C C SiC复合材料比C C复合材料的氧化速率分别降低38%和47%,失重率分别降低35%和47%;C C SiC复合材料的耐烧蚀性能优于C C复合材料.

C/C-SiC composites were prepared by polymer infiltration pyrolysis (PIP) using polysilane (PS). The oxidation and ablation behavior were compared between C/C and C/C-SiC composites. The results show that the initial oxidizing temperature of C/C-SiC composites is up to 700 ℃, and by contrast, 500 ℃ for C/C composites. As to C/C-SiC composites, the oxidizing rate is reduced by 38% and 47%, and the weight losing reduced by 35% and 47%, compared to that of C/C composites at 600 ℃ and 700 ℃, respectively. The (C/C-SiC) composites are more ablation resistant than C/C composites.