摘要
用固相烧结工艺,制备了择优取向的Bi4Ti3O12(BTO)多晶陶瓷样品,沿着与样品轴线垂直和平行的方向切割制成测量样品A和样品B。样品A和样品B分别具有c择优取向和a/(b)择优取向,样品A的c取向率为87.4%。在测量电场强度为125kV/cm时,样品A和样品B的剩余极化(2Pr)分别为5.8μC/cm2和41.2μC/cm2。样品A的漏电流和介电损耗小于样品B,样品A介电耗损峰对应的温度高于样品B,在测量频率为1MHz时,分别为663℃和658℃。
Bi_(4)Ti_(3)O_(12) (BTO) ceramics with grain orientation was fabricated by solid-state sintering process. The cylindrical BTO ceramics was cut into two types of plates: one is perpendicular to the cylinder axis (sample A), and another along the direction of the cylinder (sample B). The two samples were highly c-axis and a/(b) oriented capacitors, respectively. The sample A behaved a high c-axis orientation with a ratio about 87.4 %. Under the electric filed of 125 kV/cm the remnant polarization (2P_(r)) of sample A and sample B are 5.8 μC/cm^(2) and 41.2 μC/cm^(2), respectively. The leakage current and dielectric loss of sample A are lower than those of sample B. In dielectric losstemperature patterns, the peak temperature of sample A is higher than that of sample B, and they are 663 ℃ and 658 ℃, respectively, at a measurement frequency of 1 MHz.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2004年第11期1330-1334,共5页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(10274066)
江苏省教育厅自然科.基金(01KJB140011)资助项目。
关键词
钛酸铋
择优取向
剩余极化
介电损耗
bismuth titanate
grain orientation
remnant polarization
dielectric loss
