非晶硅光位敏探测器的开发

DEVELOPMENT OF HYDROGENATED AMORPHOUS SILICON POSITION SENSITIVE DETECTOR

以横向光伏效应为工作模式,采用全非晶硅的Pin结构,研制了一维可见光波段的光位敏探测器(PSD_s).测试结果表明,该探测器的光位敏度可达9.7mV/mm,光讯号—位移的线性探测区占有效探测总面积的65％,而最大有效光敏面积约为2cm^2.

On the basis of the lateral photovoltaic effect of p-n junction, the a-Si : H position sensitive detector with one-dimension pin+ structure has been fabricated by means of the fundamental structure and the process of the a-Si : H solar cells.The geometrical area designed of the device is 2. 5 mm× 6. 5mm. When a He-Ne laser (λ= 630nm 3000LX) is used as an incident light source, the maximum short-circuit, open-circuit position sensitivity and the maximum photocurrent measured are 3. 23mV/mm, 9. 70mV/mm and -25nA respectively. The detective area, on which there is a linear relation between position shift detected and output signal, accouts for about 65% of the effective detective area of the device.