非晶硅低温退火固相晶化的研究

THE SOLID PHASE CRYSTALLIZATION OF THE AMORPHOUS SILICON FILMS BY LOW TEMPERATURE ANNEALING

从PECVD法制取的n^+与n/n^+两种结构的a-Si:H试样,采用低温退火固相晶化工艺,得到了满足器件质量要求的大晶粒多晶硅膜。测试结果证实:在N_2气氛下,经6—10h的600℃(或800℃)温度的退火后,两种a-Si:H膜均已明显地晶化.测得了晶化膜的粒径>lμm,暗电导率、光电导率均比退火前增加了3个数量级,迁移率则增加了10—80倍。

Using the Solid phase crystallization process at low temperature annealing, the device quality polycrystal silicon films with large grains have been obtained from both n+ and i/n+ type a-Si : H samples, which were made by the PECVD method.The results confirme that two a-Si H films have been remarkably crystallized after annealing at 600℃ and 800℃ for 6-8h in N2gas. The grain size of the annealing films is larger than 1um,dark and photo-condutivities are three order of magnitude larger than those before annealed, and the mobility was increased to 10-80 times. It is believed that the annealing films have become classic polycrystal silicon films.