P型单晶硅电解掺氢的研究

A RESEARCH ON ELECTROLYSIS HYDROGENADULTERATED OF P-TYPE MONOCRYSTAL SILICON

分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。并用 G—V 法证明了分别以 H_2SO_4和H_3PO_4为电解掖时对 P 型单晶硅电解掺氢都能使硅片表面附近几个微米范围内浅杂质浓度下降,在 H_3PO_4中掺氢效果较 H_2SO_4中更为显著。

The authors carry out respective researches on the making of electrode,installation of experiment,choice of electrolyte for electrolysis hydrogenadulterated of p-type monocrystal silicon,and the distribution of shallow impurity consentyation of p-type moncrystal silicon of electyolysed.With C-V method, the authors prove that with H_2SO_4,or H_3PO_4 as electrolyte to electrolyse hydrogen-adulterated to P-type, monocrystal silicon can make the shallow impurity consentration within several microns around silicon slice surface and while adulterating hydrogen in H_3PO_4,we can get more remarkable effect.