硅光敏管内量子效率与硅的能带结构

Quantum Efficiency in Silicon Photodiode and Band Structure of Silicon

讨论了硅光管敏管内量子效率与硅的能带结构、硅的光吸收系数的关系，认为在硅光敏管PN结实现100％收集载流子的情况下，内量子效率曲线在一定程度上反映了硅的能带结构、能态密度。

The relations between the quantum efficiency in silicon photodiode and the electronic structure and absorption coefficient of silicon are discussed. The quantum effi-ciency in a UV sensitive silicon photodiode whose pn-junction could collect all the minority carries can somewhat respond to the electronic structure and the electronic density of stites in silicon.